DocumentCode :
1963086
Title :
Above X-Band Performance of Baritt Diodes
Author :
Armstrong, B. Mervyn ; Christie, John ; Gamble, Harold S. ; Stewart, J.A.C. ; Wakefield, J.
Author_Institution :
Department of Electrical and Electronic Engineering, The Queen´s University of Belfast
fYear :
1974
fDate :
10-13 Sept. 1974
Firstpage :
182
Lastpage :
186
Abstract :
The predicted small signal noise measure and impedance of pnnp Baritt diodes is described for three values of n region doping density, Nd, at frequencies up to 20GHz. It is shown that for suitable values of Nd, small signal noise measures of order 10dB or less can be maintained up to 20GHz, and small signal negative resistances of at least 1 ohm. A large signal diode simulation is used in conjunction with a simple design approach, to predict the output power of pnnp oscillators at 15GHz. Assuming a diode series loss of 0.3 ohm, an output power of 17 mW is predicted for a diode with Nd = 1016cm¿3.
Keywords :
Density measurement; Diodes; Doping; Electrical resistance measurement; Frequency measurement; Impedance measurement; Neodymium; Noise measurement; Power generation; Predictive models;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1974. 4th European
Conference_Location :
Montreux, Switzerland
Type :
conf
DOI :
10.1109/EUMA.1974.332037
Filename :
4130678
Link To Document :
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