DocumentCode :
1963094
Title :
Rectangular polysilicon diaphragms: fabrication and characterization
Author :
Woods, Eric V. ; Zhou, Zhiping
Author_Institution :
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2003
fDate :
30 June-2 July 2003
Firstpage :
366
Lastpage :
367
Abstract :
Rectangular air-gap diaphragms are difficult to mechanically characterize. A standard fabrication process developed utilizing the smallest efficient etching access ports relative the diaphragm sizes, which ranged from 1406 μm2 to 36864 μm2. Polysilicon diaphragms having a thickness of 1 μm above a 1 μm air gap were fabricated on a silicon substrate and mechanically tested to determine the amount of force relative to geometry and size required to achieve maximum deflection and initial membrane sag using a standard Berkovich tip. The results showed that the force, maximum displacement, and unloading force curve fits followed power law distributions.
Keywords :
diaphragms; elemental semiconductors; etching; mechanical testing; photolithography; silicon; etching; mechanical testing; power law distributions; rectangular air-gap diaphragms; rectangular polysilicon diaphragms; silicon substrate; Atomic force microscopy; Biomembranes; Fabrication; Geometry; Hafnium; Silicon; Sociotechnical systems; Testing; Transducers; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
ISSN :
0749-6877
Print_ISBN :
0-7803-7972-1
Type :
conf
DOI :
10.1109/UGIM.2003.1225769
Filename :
1225769
Link To Document :
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