DocumentCode
1963109
Title
Baritt Impedance from DC Measurements on Wafers
Author
Chiabrera, A. ; Soncini, G. ; Tomassini, M.
Author_Institution
University of Genoa, Viale Cambiaso 6, 16145 Genova.
fYear
1974
fDate
10-13 Sept. 1974
Firstpage
187
Lastpage
191
Abstract
The small-signal impedance of diffused junction BARITTs is obtained by an analytical expression, which depends on the dc differential resistance measured at each bias current directly on the silicon wafer. The impedances computed according to the above procedure are in agreement with published experiments and with microwave measurements carried out by an automatic network analyzer on p+-n-p+ diodes fabricated by us. The method is a fast and reliable test to further process or reject diffused BARITT wafers.
Keywords
Computer networks; Current measurement; Electrical resistance measurement; Impedance measurement; Microwave devices; Microwave measurements; Performance evaluation; Semiconductor device reliability; Semiconductor diodes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1974. 4th European
Conference_Location
Montreux, Switzerland
Type
conf
DOI
10.1109/EUMA.1974.332038
Filename
4130679
Link To Document