Title :
Overview of fully depleted silicon-on-insulator (SOI) technology
Author_Institution :
Micron Technol. Inc., Boise, ID, USA
fDate :
30 June-2 July 2003
Abstract :
This paper examines the advantages and disadvantages of thin-film, fully depleted (FD) silicon-on-insulator (SOI) technology devices compared to bulk devices, describing their desirability and suitability for low-voltage and low-power very large-scale integrated (VLSI) circuits.
Keywords :
VLSI; silicon-on-insulator; SOI devices; Si-SiO2; VLSI; low-power very large-scale integrated circuits; low-voltage very large-scale integrated circuits; silicon-on-insulator technology devices; Degradation; Integrated circuit technology; Leakage current; MOSFETs; Parasitic capacitance; Semiconductor thin films; Silicon on insulator technology; Substrates; Thin film devices; Very large scale integration;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
Print_ISBN :
0-7803-7972-1
DOI :
10.1109/UGIM.2003.1225771
