• DocumentCode
    1963166
  • Title

    Overview of fully depleted silicon-on-insulator (SOI) technology

  • Author

    Tran, Phuoc T.

  • Author_Institution
    Micron Technol. Inc., Boise, ID, USA
  • fYear
    2003
  • fDate
    30 June-2 July 2003
  • Firstpage
    370
  • Lastpage
    371
  • Abstract
    This paper examines the advantages and disadvantages of thin-film, fully depleted (FD) silicon-on-insulator (SOI) technology devices compared to bulk devices, describing their desirability and suitability for low-voltage and low-power very large-scale integrated (VLSI) circuits.
  • Keywords
    VLSI; silicon-on-insulator; SOI devices; Si-SiO2; VLSI; low-power very large-scale integrated circuits; low-voltage very large-scale integrated circuits; silicon-on-insulator technology devices; Degradation; Integrated circuit technology; Leakage current; MOSFETs; Parasitic capacitance; Semiconductor thin films; Silicon on insulator technology; Substrates; Thin film devices; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
  • ISSN
    0749-6877
  • Print_ISBN
    0-7803-7972-1
  • Type

    conf

  • DOI
    10.1109/UGIM.2003.1225771
  • Filename
    1225771
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1963166