Title :
Single photonics: turnstile device and solid-state photomultiplier
Author :
Yamamoto, Y. ; Kim, J. ; Benson, O. ; Kan, H.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
Abstract :
Summary form only given. We discuss recent progress in two single-photonic devices: a single-photon turnstile device and a solid-state photomultiplier. A single photon turnstile device is based on the simultaneous Coulomb-blockade effect for electrons and holes in a mesoscopic, double barrier, pn-tunnel junction. By periodically modulating the bias voltage between the electron and hole resonant tunneling conditions, we can periodically inject a single electron and a single hole into the central island, which will be followed by single-photon emission. A double-barrier GaAs-AlGaAs pn-tunnel junction wafer is grown by molecular beam epitaxy.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; p-n heterojunctions; photomultipliers; semiconductor growth; GaAs-AlGaAs; MBE; central island; double-barrier GaAs-AlGaAs pn-tunnel junction wafer; electron resonant tunneling conditions; hole resonant tunneling conditions; mesoscopic double barrier pn-tunnel junction; molecular beam epitaxy; periodical bias voltage modulation; simultaneous Coulomb-blockade effect; single photonics; single-photon emission; single-photon turnstile device; solid-state photomultiplier; turnstile device; Fluctuations; Frequency; Laboratories; Laser noise; Low-frequency noise; Photomultipliers; Photonics; Pulse amplifiers; Solid state circuits; Superlattices;
Conference_Titel :
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-541-2
DOI :
10.1109/IQEC.1998.680349