A 4 a peak current and 2 ns pulse width CMOS laser diode driver for high measurement rate applications

Author

Nissinen, J. ; Kostamovaara, J.

Author_Institution

Dept. of Electr. Eng., Univ. of Oulu, Oulu, Finland

fYear

2013

fDate

16-20 Sept. 2013

Firstpage

355

Lastpage

358

Abstract

A single chip integrated laser diode driver has been designed and fabricated in a high-voltage 0.35μm 50V CMOS technology for pulsed time-of-flight (TOF) laser ranging applications. A peak current and pulse width of approximately 4 A and 2ns, respectively, can be achieved through a low ohmic load in a driver structure with four parallel switching devices. With a commercial pulsed laser diode a peak optical power of 2.3 W with a pulse width of 1.5 ns was measured. Measurements showed also that a pulsing rate of at least 1 MHz is achievable. With this pulse rate the current consumption from 5.5 V and 50 V supplies is 9 mA and 5 mA, respectively.

Keywords

CMOS integrated circuits; driver circuits; laser ranging; power integrated circuits; semiconductor lasers; current 4 A; current 5 mA; current 9 mA; driver structure; high measurement rate applications; high-voltage CMOS technology; ohmic load; peak current; power 2.3 W; pulse width; pulsed time-of-flight laser ranging applications; single chip integrated laser diode driver; size 0.35 mum; time 1.5 ns; time 2 ns; voltage 5.5 V; voltage 50 V; Current measurement; Diode lasers; Measurement by laser beam; Optical pulses; Optical switches; Optical variables measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

ESSCIRC (ESSCIRC), 2013 Proceedings of the

Conference_Location

Bucharest

ISSN

1930-8833

Print_ISBN

978-1-4799-0643-7

Type

conf

DOI

10.1109/ESSCIRC.2013.6649146

Filename

6649146