DocumentCode :
1963286
Title :
A fabrication laboratory course based on GaAs MESFETs
Author :
Roenker, Kenneth P. ; Flenniken, Ron ; Kosel, Peter B.
Author_Institution :
Dept. of Electr. & Comput. Eng. & Comput. Sci., Cincinnati Univ., OH, USA
fYear :
2003
fDate :
30 June-2 July 2003
Firstpage :
391
Lastpage :
397
Abstract :
This paper describes the organization and operation of an introductory, dual level (senior/graduate) laboratory course on semiconductor device processing that is based on the fabrication and testing of GaAs MESFETs. The course is organized into a weekly lecture with a corresponding laboratory session. Over the period of one quarter, the students are led through a four mask process for fabricating n-channel GaAs MESFETs. The last three weeks of the course are utilized to perform electrical characterization of the devices and test structures incorporated in the test chip. This paper provides a description of the breakdown of the fabrication process in weekly increments, the topics covered in the accompanying lecture, resource materials provided to the student, methods used for student assessment, facilities and staffing requirements, and student capacity.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; capacitance; contact resistance; educational courses; gallium arsenide; ion implantation; leakage currents; masks; photolithography; sputter etching; student experiments; training; GaAs; dual level senior/graduate laboratory course; electrical properties; facilities; mask process; n-channel GaAs MESFET testing; resource materials; semiconductor device processing; staffing requirements; student assessment; student capacity; weekly lecture; Computer science; Fabrication; Gallium arsenide; Laboratories; MESFETs; MOSFETs; P-n junctions; Performance evaluation; Semiconductor device testing; Semiconductor devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 2003. Proceedings of the 15th Biennial
ISSN :
0749-6877
Print_ISBN :
0-7803-7972-1
Type :
conf
DOI :
10.1109/UGIM.2003.1225778
Filename :
1225778
Link To Document :
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