Title :
Flower-structured InGaN/GaN quantum-well nanodisk crystals on micromachined Si pillars
Author :
Ito, R. ; Hu, F.R. ; Ochi, K. ; Zhao, Y. ; Hane, K.
Author_Institution :
Tohoku Univ., Sendai
fDate :
Aug. 12 2007-July 16 2007
Abstract :
Periodic Si pillars were fabricated by Si-micromachining and unique flower-structured InGaN/GaN quantum-well nanodick crystals were deposited on the Si pillars. Split photoluminescence peak positions indicated stronger emission from the high In included quantum dots, as compared with the emission from the quantum-well matrix layers. Optical microscopy images indicate clear vertical and horizontal photoluminescence distributions of the flower structure on the pillared Si substrate.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; micromachining; nanostructured materials; optical microscopy; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; InGaN-GaN - Interface; Si; Si - Surface; Si pillars; flower-structured crystals; micromachining; optical microscopy; periodic pillars; photoluminescence; quantum dots; quantum-well nanodisk crystals; Crystal microstructure; Gallium nitride; Optical filters; Optical microscopy; Photoluminescence; Quantum dots; Quantum wells; Scanning electron microscopy; Substrates; Temperature; InGaN/GaN; Nanodisk; Photoluminescence; Quantum well;
Conference_Titel :
Optical MEMS and Nanophotonics, 2007 IEEE/LEOS International Conference on
Conference_Location :
Hualien
Print_ISBN :
978-1-4244-0641-8
DOI :
10.1109/OMEMS.2007.4373901
