Title :
A 0.1-mm2 3-channel area-optimized ΣΔ ADC in 0.16-µm CMOS with 20-kHz BW and 86-dB DR
Author :
Sebastiano, Fabio ; van Veldhoven, R.H.M.
Author_Institution :
NXP Semicond., Eindhoven, Netherlands
Abstract :
Front-ends for automotive sensors must digitize multiple channels with high resolution while minimizing their silicon area to save costs. Both channel latency and inter-channel gain mismatch must be minimized to be able to serve multiple sensor applications, ranging from ABS to power steering, with the same front-end. The proposed ΣΔ ADC simultaneously digitizes 3 channels, each with a DR of 86 dB over a 20-kHz BW using a 75-MHz clock. Channel latency is <;40 ns and inter-channel gain mismatch is <;0.2%. The ADC occupies only 0.1 mm2 in a 0.16-μm CMOS process. The small area is enabled by channel multiplexing, allowing component sharing among the channels, and by the large oversampling ratio (OSR), allowing for smaller capacitors.
Keywords :
CMOS integrated circuits; analogue-digital conversion; automotive electronics; delta-sigma modulation; 3-channel area-optimized ΣΔ ADC; CMOS; automotive sensors; capacitors; channel latency; channel multiplexing; frequency 20 kHz; frequency 75 MHz; front-ends; inter-channel gain mismatch; oversampling ratio; size 0.16 mum; Capacitors; Crosstalk; Gain; Modulation; Multiplexing; Noise; Sensors;
Conference_Titel :
ESSCIRC (ESSCIRC), 2013 Proceedings of the
Conference_Location :
Bucharest
Print_ISBN :
978-1-4799-0643-7
DOI :
10.1109/ESSCIRC.2013.6649151