DocumentCode
1963374
Title
Gunn and Impatt Amplifiers for Communications Systems
Author
Bowers, H.C.
Author_Institution
HUGHES AIRCRAFT COMPANY, Electron Dynamics Division, Torrance, California, USA
fYear
1974
fDate
10-13 Sept. 1974
Firstpage
252
Lastpage
256
Abstract
This paper discusses the use of negative resistance Gunn and IMPATT diodes in amplifier circuits. The operation of these diodes, their characteristics, design of circuits using them, and performance of these circuits is presented. The performance characteristics of these amplifiers pertinent to their use in frequency and phase modulated communications systems is discussed. Topics of discussion include: power output, gain, bandwidth, noise, phase linearity, AM to PM conversion, and intermodulation products.
Keywords
Bandwidth; Broadband amplifiers; Circuits; Diodes; Frequency; Gunn devices; Impedance; Injection-locked oscillators; Packaging; Power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1974. 4th European
Conference_Location
Montreux, Switzerland
Type
conf
DOI
10.1109/EUMA.1974.332051
Filename
4130692
Link To Document