DocumentCode :
1963374
Title :
Gunn and Impatt Amplifiers for Communications Systems
Author :
Bowers, H.C.
Author_Institution :
HUGHES AIRCRAFT COMPANY, Electron Dynamics Division, Torrance, California, USA
fYear :
1974
fDate :
10-13 Sept. 1974
Firstpage :
252
Lastpage :
256
Abstract :
This paper discusses the use of negative resistance Gunn and IMPATT diodes in amplifier circuits. The operation of these diodes, their characteristics, design of circuits using them, and performance of these circuits is presented. The performance characteristics of these amplifiers pertinent to their use in frequency and phase modulated communications systems is discussed. Topics of discussion include: power output, gain, bandwidth, noise, phase linearity, AM to PM conversion, and intermodulation products.
Keywords :
Bandwidth; Broadband amplifiers; Circuits; Diodes; Frequency; Gunn devices; Impedance; Injection-locked oscillators; Packaging; Power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1974. 4th European
Conference_Location :
Montreux, Switzerland
Type :
conf
DOI :
10.1109/EUMA.1974.332051
Filename :
4130692
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1963374
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