Title :
40 WATT 16 GHz Pulsed Gunn Diode Oscillator
Author :
Stevens, R. ; Tarrant, D. ; Myers, F.A.
Abstract :
Very high peak power levels at microwave frequencies can be generated from several semiconductor devices (Gunn diodes, L.S.A. mode devices, TRAPATT´s etc.) but some of these devices are only little removed from laboratory devices, and are limited in frequency. The Gunn device is the most practical and proven device but at 16 GHz is only capable of powers of around 10 watts peak. A simple technique is described which results in the addition of the powers and does not degrade the other parameters, such as R.F. rise time.
Keywords :
Degradation; Gunn devices; High power microwave generation; Laboratories; Microwave frequencies; Microwave generation; Microwave oscillators; Power generation; Semiconductor devices; Semiconductor diodes;
Conference_Titel :
Microwave Conference, 1974. 4th European
Conference_Location :
Montreux, Switzerland
DOI :
10.1109/EUMA.1974.332052
