High-performance Al-free diode lasers

Author

Mawst, L.J.

Author_Institution

Wisconsin Univ., Madison, WI, USA

fYear

1997

fDate

11-13 Aug. 1997

Firstpage

76

Lastpage

77

Abstract

Broad area, 100 /spl mu/m-stripe lasers, with Al-free InGaAs-InGaAsP-InGaP active regions operating at a wavelength of 0.98 /spl mu/m (0.81 /spl mu/m), provide high CW powers: 8 W (5 W) and "wallplug" efficiencies: 66 % (45 %). At 0.81 /spl mu/m, the devices are potentially twice as reliable as Al-containing active-layer devices.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; quantum well lasers; waveguide lasers; 0.81 mum; 0.98 mum; 100 mum; 45 percent; 5 W; 66 percent; 8 W; Al-free active regions; InGaAs-InGaAsP-InGaP; InGaAs-InGaAsP-InGaP active regions; broad area 100 /spl mu/m-stripe lasers; high CW powers; high-performance Al-free diode lasers; wallplug efficiencies; Diode lasers; Electrons; Gallium arsenide; Indium gallium arsenide; Optical materials; Optical waveguides; Power generation; Power lasers; Quantum well lasers; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi

Conference_Location

Montreal, Que., Canada

Print_ISBN

0-7803-3891-X

Type

conf

DOI

10.1109/LEOSST.1997.619229

Filename

619229