DocumentCode
1963517
Title
Reliability ground rules change at <50 μm pitch
Author
Singh, Indejit ; Levine, Lee ; Brunner, Jon
Author_Institution
nVidia Corp., Santa Clara, CA, USA
fYear
2003
fDate
16-18 July 2003
Firstpage
39
Lastpage
43
Abstract
Qualification of a new 40 μm pitch wire bonding process requires significant process improvements and evaluations demonstrating process capability and reliability. Recent changes in the morphology of the ball bond, required to achieve high yield manufacturing with the largest diameter wire possible at this pitch, have changed the failure mode for high quality bonds. With newly developed high-strength bonding wire long-term aging is a critical task. Choice of failure criteria and test requirements are critical to success. These must assure long-term reliability and must also reflect reality. Ultra-fine pitch bonding on probed bond pads can significantly effect process yields and intermetallic formation. Device designs that separate probe and wire bond placement within a rectangular bond pad are preferred.
Keywords
fine-pitch technology; lead bonding; reliability; 40 micron; ball bond morphology; bonding wire ageing; device design; intermetallic formation; rectangular bond pad; ultra fine pitch bonding; wire bonding process reliability; Artificial intelligence; Bonding processes; Casting; Electronics cooling; Heating; Morphology; Shape control; Temperature control; Testing; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Manufacturing Technology Symposium, 2003. IEMT 2003. IEEE/CPMT/SEMI 28th International
ISSN
1089-8190
Print_ISBN
0-7803-7933-0
Type
conf
DOI
10.1109/IEMT.2003.1225875
Filename
1225875
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