DocumentCode :
1963517
Title :
Reliability ground rules change at <50 μm pitch
Author :
Singh, Indejit ; Levine, Lee ; Brunner, Jon
Author_Institution :
nVidia Corp., Santa Clara, CA, USA
fYear :
2003
fDate :
16-18 July 2003
Firstpage :
39
Lastpage :
43
Abstract :
Qualification of a new 40 μm pitch wire bonding process requires significant process improvements and evaluations demonstrating process capability and reliability. Recent changes in the morphology of the ball bond, required to achieve high yield manufacturing with the largest diameter wire possible at this pitch, have changed the failure mode for high quality bonds. With newly developed high-strength bonding wire long-term aging is a critical task. Choice of failure criteria and test requirements are critical to success. These must assure long-term reliability and must also reflect reality. Ultra-fine pitch bonding on probed bond pads can significantly effect process yields and intermetallic formation. Device designs that separate probe and wire bond placement within a rectangular bond pad are preferred.
Keywords :
fine-pitch technology; lead bonding; reliability; 40 micron; ball bond morphology; bonding wire ageing; device design; intermetallic formation; rectangular bond pad; ultra fine pitch bonding; wire bonding process reliability; Artificial intelligence; Bonding processes; Casting; Electronics cooling; Heating; Morphology; Shape control; Temperature control; Testing; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Manufacturing Technology Symposium, 2003. IEMT 2003. IEEE/CPMT/SEMI 28th International
ISSN :
1089-8190
Print_ISBN :
0-7803-7933-0
Type :
conf
DOI :
10.1109/IEMT.2003.1225875
Filename :
1225875
Link To Document :
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