Title :
Optical properties of InGaN double heterostructures and quantum wells grown by metalorganic chemical vapor deposition
Author :
Dupuis, R.D. ; Grudowski, P.A. ; Eiting, C.J. ; Park, J. ; Shelton, B.S. ; Lambert, D.J.H. ; Shmagin, I. ; Kolbas, R.M.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
High-quality III-V nitride epitaxial films and heterostructures are of great importance for a wide variety of electronic and optoelectronic devices. In this talk, data are presented on the optical and structural properties of InGaN-GaN heteroepitaxial films and InGaN-InGaN heterostructures and quantum wells grown by low-pressure metalorganic chemical vapor deposition (MOCVD). The films have been characterized by room-temperature (300K) and low temperature (77K and 4.2K) photoluminescence (PL), cathodoluminescence (CL), high resolution X-ray diffraction, secondary-ion mass spectrometry, and transmission electron microscopy.
Keywords :
III-V semiconductors; X-ray diffraction; cathodoluminescence; gallium compounds; indium compounds; low-temperature techniques; optical films; photoluminescence; secondary ion mass spectroscopy; semiconductor growth; semiconductor quantum wells; transmission electron microscopy; vapour phase epitaxial growth; 300 K; 4.2 K; 77 K; InGaN double heterostructures; InGaN quantum wells; InGaN-GaN; InGaN-GaN heteroepitaxial films; InGaN-InGaN heterostructures; MOCVD; cathodoluminescence; high resolution X-ray diffraction; low temperature; low-pressure metalorganic chemical vapor deposition; photoluminescence; room-temperature; secondary-ion mass spectrometry; transmission electron microscopy; Chemical vapor deposition; Electron optics; III-V semiconductor materials; MOCVD; Optical diffraction; Optical films; Optoelectronic devices; Photoluminescence; Temperature; X-ray diffraction;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619235
