On the incorporation of arsenic (As) in GaN films by conventional MOCVD

Summary form only given. We report on the As incorporation in GaN films by atmospheric pressure MOCVD using AsH/sub 3/ and NH/sub 3/ as the As and N sources, respectively. The effect of growth parameters on the incorporation efficiency, including growth temperature, growth rate, layer thickness, ratio of AsH/sub 3/ and NH/sub 3/ flows for single layer growth, and the effect of growth interruption for multilayer growth, have been investigated. Of particular interest is the incorporation of As at a doping level. The optimum growth condition for the doping of As in GaN producing strong luminescence at a characteristic emission wavelength (/spl sim/480 nm) has been identified. The characteristic emission has been attributed to excitons bound at As isoelectronic impurities. Arsenic (As) concentration and its depth distribution are measured by SIMS. The crystal quality after As incorporation is demonstrated by X-ray diffraction rocking curve. Room temperature and low temperature cathodoluminescence (CL), photoluminescence (PL) spectroscopy and imaging are used to characterize the optical properties. Results will be compared with As ion implanted GaN.