Title :
Performance impact of through-silicon vias (TSVs) in three-dimensional technology measured by SRAM ring oscillators
Author :
Kuang, Jente B. ; Jenkins, Keith A. ; Stawiasz, Kevin ; Schaub, J.
Author_Institution :
IBM Austin Res. Lab., Austin, TX, USA
Abstract :
A compact SRAM ring oscillator circuit for local, in-situ, probing of device performance is described. Applied to three-dimensional integrated circuit technology (3DI), the circuit is used to determine if there is any effect on SRAM performance when the cells are placed in close proximity to through-silicon vias (TSVs).
Keywords :
SRAM chips; oscillators; three-dimensional integrated circuits; SRAM ring oscillators; TSV; three-dimensional integrated circuit technology; three-dimensional technology; through-silicon vias; Annealing; Frequency measurement; Random access memory; Ring oscillators; Semiconductor device measurement; Three-dimensional displays; Through-silicon vias;
Conference_Titel :
ESSCIRC (ESSCIRC), 2013 Proceedings of the
Conference_Location :
Bucharest
Print_ISBN :
978-1-4799-0643-7
DOI :
10.1109/ESSCIRC.2013.6649162
