DocumentCode
1963655
Title
A comparison of silicon and oxygen doping of GaN and optical and electrical properties of deposited layers
Author
Niebuhr, R. ; Wachtendorf, B. ; Schmitz, D. ; Beccard, R. ; Jurgensen, H. ; Santic, B. ; Schlotter, P. ; Meier, M. ; Kaufmann, U. ; Bachem, K.H.
Author_Institution
AIXTRON Semicond. Technol., Aachen, Germany
fYear
1997
fDate
11-13 Aug. 1997
Firstpage
11
Lastpage
12
Abstract
The purpose of the experiments presented in this paper is to study the effects of intentional oxygen and silicon doping on the properties of GaN layers. We will report for the first time on the comparison of these dopants and the doping of GaN with oxygen using N/sub 2/O.
Keywords
III-V semiconductors; gallium compounds; oxygen; semiconductor doping; silicon; GaN:Si,O; doping; electrical properties; optical properties; Excitons; Gallium nitride; Nitrogen; Oxygen; Photoluminescence; Photonic band gap; Semiconductor device doping; Silicon; Solid state circuits; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location
Montreal, Que., Canada
Print_ISBN
0-7803-3891-X
Type
conf
DOI
10.1109/LEOSST.1997.619239
Filename
619239
Link To Document