Title :
A comparison of silicon and oxygen doping of GaN and optical and electrical properties of deposited layers
Author :
Niebuhr, R. ; Wachtendorf, B. ; Schmitz, D. ; Beccard, R. ; Jurgensen, H. ; Santic, B. ; Schlotter, P. ; Meier, M. ; Kaufmann, U. ; Bachem, K.H.
Author_Institution :
AIXTRON Semicond. Technol., Aachen, Germany
Abstract :
The purpose of the experiments presented in this paper is to study the effects of intentional oxygen and silicon doping on the properties of GaN layers. We will report for the first time on the comparison of these dopants and the doping of GaN with oxygen using N/sub 2/O.
Keywords :
III-V semiconductors; gallium compounds; oxygen; semiconductor doping; silicon; GaN:Si,O; doping; electrical properties; optical properties; Excitons; Gallium nitride; Nitrogen; Oxygen; Photoluminescence; Photonic band gap; Semiconductor device doping; Silicon; Solid state circuits; Temperature;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619239
