High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs

A high temperature compensated voltage reference integrated circuit (IC), was designed and for the first time fabricated on silicon carbide (SiC) material, using MESFET devices. A planar finger type MESFET was developed for this purpose. The schematic and the principle of the presented circuit is based on a new concept that replace the typical bandgap reference and avoid the necessity of using an operational amplifier (OpAmp), which is not yet developed on SiC. The experimental temperature coefficient (TC) is significantly better than a Zener diode and comparable to the normal bandgap voltage references on silicon, but the present circuit is able to work up to 300°C. The circuit contains also a linearized temperature sensor.