Title :
Power Saturation Mechanisms in IMPATTS
Author_Institution :
Department of Electronic and Electrical Engineering, University College London.
Abstract :
A computer simulation of the operation of IMPATT diodes has been used to investigate the factors which limit the output power available from IMPATTS. Computed and experimental results are compared for existing silicon and gallium arsenide X-band structures: the degree of agreement obtained is taken as support for the diode model. The relative importance of various contributory saturation mechanisms are then isolated and discussed
Keywords :
Circuit simulation; Current density; Diodes; Frequency; Gallium arsenide; Impedance; Power generation; Silicon; Temperature; Voltage;
Conference_Titel :
Microwave Conference, 1974. 4th European
Conference_Location :
Montreux, Switzerland
DOI :
10.1109/EUMA.1974.332067
