The effects of boundary layer and thermal gradient upon GaN growth

Gallium nitride (GaN) is a very promising material for short wavelength optoelectronic devices. Recently, much progress has been made on device fabrication, but little is still known about the growth parameters of GaN. We have studied two of the parameters effecting the growth of high quality GaN. The boundary layer plays an important role in the growth of most III-V materials but no data is currently available upon it´s effect on GaN growth. Likewise, very few results are available on the effect of the thermal gradient upon the growth of single crystal GaN.