Control of unidirectional operation in semiconductor ring lasers

Author

Sorel, Marc ; Laybourn, P.J.R.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ.

Volume

2

fYear

2001

fDate

2001

Firstpage

513

Abstract

We have measured unidirectional laser operation in a semiconductor ring laser, controlled through the biasing of a coupled waveguide cavity. The devices fabricated consist of a circular ridge waveguide 2 μm wide formed on InGaAs/InGaAsP and GaAs/AlGaAs material systems. The direction of the dominant mode switches as the laser current is increased, and can also be switched by altering the bias of the coupled guide. The subordinate mode is completely suppressed, spectral measurements indicating that any output is purely spontaneous emission

Keywords

laser cavity resonators; laser modes; ring lasers; semiconductor lasers; spontaneous emission; 2 micron; GaAs-AlGaAs; GaAs/AlGaAs; InGaAs-InGaAsP; InGaAs/InGaAsP; coupled guide; coupled waveguide cavity biasing; dominant mode; laser current; laser switching; purely spontaneous emission; semiconductor ring laser; spectral measurements; subordinate mode; unidirectional laser operation; Gallium arsenide; Indium gallium arsenide; Laser modes; Optical control; Optical coupling; Optical materials; Ring lasers; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.968898

Filename

968898