High quality thin gate oxides on SIMOX substrates with phosphorous implanted source/drain and a shallow trench isolation

Author

Seo, J.-H. ; Woo, J.C.S. ; Maszara, W.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1998

fDate

5-8 Oct. 1998

Firstpage

89

Lastpage

90

Abstract

The early-failure-rate of gate oxides on SIMOX-type SOI substrates due to SOI film stress and damage can be as low as that of their bulk counterparts by using a shallow trench isolation and phosphorous implanted source/drain, which reduces the stress and damage due to high temperature oxidation and high dose implantation.

Keywords

CMOS integrated circuits; MOS capacitors; SIMOX; dielectric thin films; doping profiles; failure analysis; integrated circuit reliability; integrated circuit testing; ion implantation; isolation technology; phosphorus; quality control; CMOS process; MOS capacitors; SIMOX substrates; SIMOX-type SOI substrates; SOI film damage; SOI film stress; Si-SiO/sub 2/; Si:P; gate oxide early-failure-rate; gate oxide quality; gate oxides; high dose implantation; high temperature oxidation; phosphorous implanted source/drain; shallow trench isolation; thin gate oxides; Annealing; Current density; Design for quality; Electric breakdown; Fabrication; MOS capacitors; Semiconductor films; Silicon; Substrates; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1998. Proceedings., 1998 IEEE International

Conference_Location

Stuart, FL, USA

ISSN

1078-621X

Print_ISBN

0-7803-4500-2

Type

conf

DOI

10.1109/SOI.1998.723125

Filename

723125