DocumentCode
1963998
Title
A new packaging technology for GaAs MMIC modules
Author
Tomimuro, Hisashi ; Ishitsuka, Fuminori ; Sato, Nobuo ; Muraguchi, Masahiro
Author_Institution
NTT Appl. Electron. Lab., Tokyo, Japan
fYear
1989
fDate
22-25 Oct. 1989
Firstpage
307
Lastpage
310
Abstract
A coplanar film carrier for packaging uniplanar MMICs (monolithic microwave integrated circuits) is presented. This film carrier has an insulating polyimide film on which RF, DC bias, and ground conductor areas are formed. The areas extend into bonding windows, which are etched in the polyimide film, and the extended portions form inner and outer leads. The interconnection of the inner and outer leads to MMIC-electrode pads is highly reliable because of the gold-plated bumps formed at the distal ends of the inner and outer leads. The coplanar film carrier has an insertion loss of less than 0.2 dB/mm without resonance over the frequency range from DC to 30 GHz. The electrical performance of the GaAs MMIC module with coplanar film carrier is almost equal to that of the MMIC measured directly on-wafer.<>
Keywords
III-V semiconductors; MMIC; packaging; polymer films; 0 to 30 GHz; Au plated bumps; DC bias; GaAs; MMIC-electrode pads; bonding windows; coplanar film carrier; distal ends; ground conductor areas; insertion loss; insulating polyimide film; interconnection; packaging technology; uniplanar MMICs; Conductive films; Gallium arsenide; Insulation; Integrated circuit packaging; Integrated circuit technology; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Polyimides; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location
San Diego, CA, USA
Type
conf
DOI
10.1109/GAAS.1989.69349
Filename
69349
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