DocumentCode
1963999
Title
FBAR resonator figure of merit improvements
Author
Wang, Yaqiang ; Feng, Chris ; Lamers, Tina ; Feld, Dave ; Bradley, Paul ; Ruby, Rich
Author_Institution
Wireless Semicond. Div., Avago Technol., Fort Collins, CO, USA
fYear
2010
fDate
11-14 Oct. 2010
Firstpage
861
Lastpage
863
Abstract
Free-standing Bulk Acoustic Resonator (FBAR), as one type of bulk acoustic wave (BAW) devices, has extremely high Q to enable excellent filter performance, and has been successfully applied to the wireless communication market. The Bode equation to calculate the unloaded Q is used to map the Avago FBAR product line resonator Rp values. The manufacturing Rp values from old and new generations of FBAR products are collected and compared to demonstrate the importance of the figure of merit (FOM) improvements.
Keywords
acoustic resonators; bulk acoustic wave devices; BAW devices; Bode equation; FBAR resonator; bulk acoustic wave devices; figure of merit; free-standing bulk acoustic resonator; merit improvements; wireless communication market; Band pass filters; Film bulk acoustic resonators; Production; Q measurement; Resonant frequency; Resonator filters; FBAR; FOM; Statistical Process Control (SPC);
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2010 IEEE
Conference_Location
San Diego, CA
ISSN
1948-5719
Print_ISBN
978-1-4577-0382-9
Type
conf
DOI
10.1109/ULTSYM.2010.5936004
Filename
5936004
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