Title :
FBAR resonator figure of merit improvements
Author :
Wang, Yaqiang ; Feng, Chris ; Lamers, Tina ; Feld, Dave ; Bradley, Paul ; Ruby, Rich
Author_Institution :
Wireless Semicond. Div., Avago Technol., Fort Collins, CO, USA
Abstract :
Free-standing Bulk Acoustic Resonator (FBAR), as one type of bulk acoustic wave (BAW) devices, has extremely high Q to enable excellent filter performance, and has been successfully applied to the wireless communication market. The Bode equation to calculate the unloaded Q is used to map the Avago FBAR product line resonator Rp values. The manufacturing Rp values from old and new generations of FBAR products are collected and compared to demonstrate the importance of the figure of merit (FOM) improvements.
Keywords :
acoustic resonators; bulk acoustic wave devices; BAW devices; Bode equation; FBAR resonator; bulk acoustic wave devices; figure of merit; free-standing bulk acoustic resonator; merit improvements; wireless communication market; Band pass filters; Film bulk acoustic resonators; Production; Q measurement; Resonant frequency; Resonator filters; FBAR; FOM; Statistical Process Control (SPC);
Conference_Titel :
Ultrasonics Symposium (IUS), 2010 IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0382-9
DOI :
10.1109/ULTSYM.2010.5936004
