Title :
A 16-bit 10Gsps current steering RF DAC in 65nm CMOS achieving 65dBc ACLR multi-carrier performance at 4.5GHz Fout
Author :
Engel, Gil ; Clara, Martin ; Haiyang Zhu ; Wilkins, Paul
Author_Institution :
Analog Devices, Inc., Wilmington, MA, USA
Abstract :
This paper presents an RF DAC fabricated in a 65nm 1p7m CMOS process. The DAC is capable of >10Gsps operation dissipating ~800mW. At 3Gsps the SFDR > 70dBc beyond 1GHz and the IM3 performance is <; -80dBc within the same range. Signal processing is incorporated into the DAC providing interpolation and modulation through the full Nyquist band. Features and performance enable a wide application range including cable infrastructure, wireless communications, instrumentation, defense & aerospace. These performance capabilities are enabled by a modified DAC switch output structure and a novel current source calibration scheme1.
Keywords :
CMOS integrated circuits; digital-analogue conversion; ACLR multicarrier performance; CMOS integrated circuit; current steering RF DAC; frequency 4.5 GHz; full Nyquist band; size 65 nm; CMOS integrated circuits; Calibration; Performance evaluation; Radio frequency; Solid state circuits; Switches; Temperature measurement; CMOS; RF DAC; current-steering; digital-to-analog converter (DAC);
Conference_Titel :
VLSI Circuits (VLSI Circuits), 2015 Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-86348-502-0
DOI :
10.1109/VLSIC.2015.7231252
