• DocumentCode
    1964193
  • Title

    Effects of Tunneling on High Efficiency IMPATT Avalanche Diodes

  • Author

    Chive, M. ; Constant, E. ; Pribetich, J. ; Lefebvre, M.

  • Author_Institution
    CENTRE HYPERFREQUENCES ET SEMICONDUCTEURS, Equipe Associée au C.N.R.S. n° 454, UNIVERSITE DE LILLE I, BP 36 - 59650 VILLENEUVE D´´ASCQ - FRANCE
  • fYear
    1974
  • fDate
    10-13 Sept. 1974
  • Firstpage
    454
  • Lastpage
    458
  • Abstract
    We study theoretically and experimentally the effect of a tunnel injection on high efficiency IMPATT avalanche diodes characterized by high low or low high low doping profile. Taking into account effects of tunneling some characteristics usually observed of such high efficiency IMPATT oscillator are explained. Then some criteria are deduced to select the best doping profile in order to obtain high efficiency in the centimeter wave region.
  • Keywords
    Doping profiles; Equations; Impedance; Microwave devices; Oscillators; Radio frequency; Semiconductor diodes; Temperature; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1974. 4th European
  • Conference_Location
    Montreux, Switzerland
  • Type

    conf

  • DOI
    10.1109/EUMA.1974.332092
  • Filename
    4130733
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1964193