15 GBPS MUX/DMUX implemented with AlGaAs/GaAs HBTs

Author

Kuriyama, Y. ; Morizuka, K. ; Akagi, J. ; Asaka, M. ; Tsuda, K. ; Obara, M.

Author_Institution

Toshiba R&D Center, Kawasaki, Japan

fYear

1989

fDate

22-25 Oct. 1989

Firstpage

313

Lastpage

316

Abstract

AlGaAs/GaAs HBTs (heterojunction bipolar transistors) with improved high-speed performance obtained by a self-alignment technology and a new layer design have been used to construct ultra-high-speed MUX (multiplexer) and DMUX (demultiplexer) ICs. Quantitative error-free operation of these ICs was confirmed up to 10 Gb/s. Although only a few test patterns were available, the maximum operation speeds of the MUX and the DMUX were found to be around 15 Gb/s and 19 Gb/s, respectively. These results demonstrate the promising potential of HBTs for coming ultra-high-speed digital systems.<>

Keywords

III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated logic circuits; multiplexing equipment; 10 to 19 Gbit/s; AlGaAs-GaAs; DMUX ICs; HBTs; demultiplexer; multiplexer; self-alignment technology; test patterns; ultra-high-speed MUX; ultra-high-speed digital systems; Clocks; Coupling circuits; Delay effects; Gallium arsenide; Heterojunction bipolar transistors; Jitter; Logic circuits; Logic design; Merging; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/GAAS.1989.69350

Filename

69350