Title :
Metalorganic vapor phase epitaxy of quantum dots
Author :
Coleman, J.J. ; Yeoh, T.S.
Author_Institution :
Illinois Univ., Urbana, IL, USA
Abstract :
A method of maskless selective area epitaxy of InAs quantum dots using underlying InGaAs is presented. By using standard lithography techniques, selective area epitaxy of quantum dots was achieved on In 0.20Ga0.80As layers with a QD density exceeding 3×1010 cm2. The advantage of this method lies in the lack of oxide or nitride mask material, allowing for a single regrowth process that is not complicated by any additional thermal dose or growth rate enhancement
Keywords :
III-V semiconductors; MOCVD; cathodoluminescence; indium compounds; quantum well lasers; self-assembly; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; 2D to 3D transition; AFM micrographs; CL spectra; InAs; InGaAs; MOVPE; QD lasers; critical layer thickness; lattice-matched films; maskless selective area epitaxy; quantum dots; segregation properties; single regrowth process; standard lithography; surface chemical potential; surface exchange reactions; underlying layer effect; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Luminescence; Nanoscale devices; Quantum dot lasers; Quantum dots; Transistors; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.968938
