Metalorganic vapor phase epitaxy of quantum dots

Author

Coleman, J.J. ; Yeoh, T.S.

Author_Institution

Illinois Univ., Urbana, IL, USA

Volume

2

fYear

2001

fDate

2001

Firstpage

560

Abstract

A method of maskless selective area epitaxy of InAs quantum dots using underlying InGaAs is presented. By using standard lithography techniques, selective area epitaxy of quantum dots was achieved on In _0.20Ga_0.80As layers with a QD density exceeding 3×10¹⁰ cm². The advantage of this method lies in the lack of oxide or nitride mask material, allowing for a single regrowth process that is not complicated by any additional thermal dose or growth rate enhancement

Keywords

III-V semiconductors; MOCVD; cathodoluminescence; indium compounds; quantum well lasers; self-assembly; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; 2D to 3D transition; AFM micrographs; CL spectra; InAs; InGaAs; MOVPE; QD lasers; critical layer thickness; lattice-matched films; maskless selective area epitaxy; quantum dots; segregation properties; single regrowth process; standard lithography; surface chemical potential; surface exchange reactions; underlying layer effect; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Luminescence; Nanoscale devices; Quantum dot lasers; Quantum dots; Transistors; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.968938

Filename

968938