• DocumentCode
    1964708
  • Title

    Barrier and well width study of InGaN/GaN multiple quantum wells

  • Author

    Abare, A.C. ; Keller, S. ; Mack, M.P. ; Coldren, L.A. ; DenBaars, S.P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • fYear
    1997
  • fDate
    11-13 Aug. 1997
  • Firstpage
    25
  • Lastpage
    26
  • Abstract
    InGaN multiple quantum wells have proven critical for the achievement of laser diodes in the (Ga,Al,In)N system. We have studied the effects of barrier width and well width in MQW structures for use in laser diodes.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; quantum well lasers; semiconductor quantum wells; InGaN-GaN; InGaN/GaN multiple quantum well; barrier width; laser diode; well width; Calibration; Degradation; Diode lasers; Gallium nitride; Photoluminescence; Quantum computing; Quantum well devices; Superlattices; Temperature; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
  • Conference_Location
    Montreal, Que., Canada
  • Print_ISBN
    0-7803-3891-X
  • Type

    conf

  • DOI
    10.1109/LEOSST.1997.619246
  • Filename
    619246
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1964708