A 144MHz integrated resonant regulating rectifier with hybrid pulse modulation

This paper presents a CMOS fully-integrated resonant regulating rectifier (IR³) for inductive power telemetry in implantable devices. Employing PWM and PFM feedback, the IR³ achieves 1.87% of ΔV_DD/V_DD ratio despite a tenfold change in load with a 1nF decoupling capacitor. At 1V regulation of a 100μW load from a 144MHz RF input, the measured voltage conversion efficiency is greater than 92% at under 5.2mV_pp ripple and 54% power conversion efficiency. Implemented in 180nm SOI CMOS, the IR³ circuit occupies 0.078mm² active area.