DocumentCode :
1964934
Title :
High power F2 lasers for microlithography
Author :
Mizoguchi, Hakaru ; Fujimoto, Junichi ; Nakaike, Takanori ; Suzuki, Tom ; Nagai, Shinji ; Yabu, Takayuki ; Soumagne, Georg ; Chiba, Teiichiro ; Wakabayashi, Osamu ; Nohdomi, Ryoichi ; Ariga, Tatsuya ; Watanabe, Hidenori ; Kumazaki, Takahito ; Kitatochi, N
Author_Institution :
Res. Div., Gigaphoton Inc, Kanagawa, Japan
Volume :
2
fYear :
2001
fDate :
2001
Firstpage :
590
Abstract :
This paper describes the latest result of F2 laser development in Japan. F2 laser lithography is expected to be applied to the 50 nm node process. Developments discussed are line-selected F2 laser (for catadioptric imaging system) and high power ultra line-narrowed F2 laser (for dioptric imaging system)
Keywords :
excimer lasers; fluorine; ultraviolet lithography; 157 nm; F2; MOPA; UV microlithography; catadioptric imaging; compact absolute wavelength spectrometer; dioptric imaging; high power lasers; line-selected laser; projection lens designs; Bandwidth; Deconvolution; Electronics industry; Gratings; Injection-locked oscillators; Lithography; Operational amplifiers; Paper technology; Power amplifiers; Power lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-7105-4
Type :
conf
DOI :
10.1109/LEOS.2001.968953
Filename :
968953
Link To Document :
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