Title :
A 1.8 V SiGe BiCMOS Cable Equalizer with 40-dB Peaking Control up to 60 GHz
Author :
Sarkas, Ioannis ; Voinigescu, Sorin P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada
Abstract :
A low-noise, digitally-assisted broadband cable equalizer with 26 dB gain and over 40 dB of gain and peaking control from DC to 60 GHz was designed and fabricated in a production 130-nm SiGe BiCMOS technology. The circuit features a low-voltage and low-noise TIA input stage, and digitally variable gain cells based on MOS-HBT cascodes. Equalization of 44 and 78.6-Gb/s data rates over 6 and 4 m long coaxial cables with 30 dB attenuation at the respective Nyquist frequency is demonstrated. The chip consumes 250 mW from a single 1.8 V supply.
Keywords :
BiCMOS integrated circuits; heterojunction bipolar transistors; BiCMOS cable equalizer; BiCMOS technology; MOS-HBT cascodes; Nyquist frequency; SiGe; digitally assisted broadband cable equalizer; equalization; gain 26 dB; peaking control; power 250 mW; size 130 nm; voltage 1.8 V; BiCMOS integrated circuits; Coaxial cables; Equalizers; Gain; Gain measurement; Noise measurement; Silicon germanium;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
Conference_Location :
La Jolla, CA
Print_ISBN :
978-1-4673-0928-8
DOI :
10.1109/CSICS.2012.6340053
