Title :
High-performance 1.3-μm VCSELs with GaAsSb/GaAs quantum wells
Author :
Yamada, Mitsuki ; Anan, Takayoshi ; Kurihara, Kaori ; Nishi, Kenichi ; Tokutome, Keiichi ; Kamer, A. ; Sugou, Shigeo
Author_Institution :
Opt. Interconnection NEC Lab., NEC Corp., Ibaraki, Japan
Abstract :
We have demonstrated CW and high-speed performance of GaAsSb/GaAs VCSELs lasing at a wavelength of longer than 1.27 μm. 1.295 μm lasing was achieved with a threshold of 1.1 mA. Single-mode output of 0.46 mW, and 4.5-GHz bandwidth was obtained at 1.27 μm. Thus, GaAsSb/GaAs VCSELs should be viable low-cost light sources for high-capacity optical fiber systems
Keywords :
III-V semiconductors; MOCVD; chemical beam epitaxial growth; gallium arsenide; optical transmitters; quantum well lasers; surface emitting lasers; 1.295 micron; 1.3 micron; 4.5 GHz; CW operation; GaAsSb-GaAs; bottom-emitting VCSEL; double quantum; gas-source molecular beam epitaxy; high-capacity optical fiber systems; high-performance VCSEL; high-speed performance low-cost light sources; hole-injection uniformity; light-current characteristics; metal-organic vapor phase epitaxy; quantum well lasers; single-mode output; threshold current; voltage-current characteristics; Apertures; Capacitive sensors; Distributed Bragg reflectors; Epitaxial growth; Epitaxial layers; Gallium arsenide; Laboratories; National electric code; Optical interconnections; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.968957
