Title :
Broadband diffraction in a photorefractive asymmetric coupled quantum well structure
Author :
Iwamoto, S. ; Nishioka, M. ; Someya, T. ; Arakawa, Y. ; Shimura, T. ; Kuroda, K.
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
We report a new approach to expand the diffraction bandwidth of a photorefractive device in the longitudinal-field geometry by using asymmetric coupled quantum well (ACQW) structures. The longitudinal-field geometry is another configuration of PR MQW devices. Compared with devices in the transverse-field geometry, larger diffraction efficiency is obtained with a smaller operating voltage (10-20V) in the longitudinal-field geometry. The device has a photorefractive p-i-n structure
Keywords :
III-V semiconductors; diffraction gratings; electro-optical modulation; electroabsorption; gallium arsenide; infrared spectra; multiwave mixing; p-i-n photodiodes; photorefractive materials; semiconductor quantum wells; AlGaAs; GaAs; PR MQW devices; asymmetric coupled quantum well structures; broadband diffraction; diffraction bandwidth; diffraction efficiency; longitudinal-field geometry; operating voltage; photorefractive asymmetric coupled quantum well structure; photorefractive device; Bandwidth; Diffraction; Gallium arsenide; Geometry; Gratings; Optical devices; Optical modulation; Photorefractive effect; Ultrafast optics; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.968965
