Phase separation in bulk InGaN and quantum wells grown by low pressure MOCVD

Author

Tran, C.A. ; Karlicek, R.F. ; Schurman, Matthew ; Salagaj, T. ; Thompson, Andrew ; Stall, Rick

Author_Institution

Encore Corp., Somerset, NJ, USA

fYear

1997

fDate

11-13 Aug. 1997

Firstpage

29

Lastpage

30

Abstract

We have grown high quality InGaN layers and InGaN/GaN multiple quantum wells for blue LED applications. The degree of phase segregation of InGaN in bulk InGaN layers depends on the TMI and TMG flow rates as well as the growth temperature. Even for films without indium droplets on the surface, X-ray diffraction (XRD) reveals the coexistence of different indium compositions in the films. In this case photoluminescence of the films is red-shifted with respect to the wavelength calculated using the indium composition determined by XRD. The same observation is made for the multiple quantum wells, where phase segregation can significantly reduce interface abruptness.

Keywords

CVD coatings; III-V semiconductors; X-ray diffraction; gallium compounds; indium compounds; photoluminescence; segregation; semiconductor growth; semiconductor quantum wells; semiconductor thin films; InGaN; InGaN-GaN; InGaN/GaN multiple quantum well; X-ray diffraction; blue LED; bulk InGaN; film; low pressure MOCVD growth; phase separation; photoluminescence; segregation; Electroluminescence; Excitons; Gallium nitride; Indium; Light emitting diodes; MOCVD; Photoluminescence; Quantum well devices; Temperature dependence; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi

Conference_Location

Montreal, Que., Canada

Print_ISBN

0-7803-3891-X

Type

conf

DOI

10.1109/LEOSST.1997.619248

Filename

619248