DocumentCode :
1965233
Title :
1.1 Ghz integer N phase lock loop with superior single event upset and total dose properties suitable for commercial space applications
Author :
Lyons, G.
Author_Institution :
Peregrine Semicond. Corp., San Diego, CA, USA
fYear :
1998
fDate :
5-8 Oct. 1998
Firstpage :
101
Lastpage :
102
Abstract :
Poor single event upset (SEU) and single event latchup (SEL) immunity are of major concern in high speed RF phase lock loops (PLLs) incorporated in many of current commercial satellites. As a result, greater demands are placed at the system level to compensate for this. These include reloading programming every clock cycle, parallel interfaces and redundancy, which result in increased size, weight, complexity and power. We present in this paper a 1.1 Ghz integer N PLL which is inherently SEL immune, has SEU rates less than 10/sup -9/ errors/bit-day (orders of magnitude better than currently available), excellent phase noise performance and standby current up to 100 krads(Si) total dose. This part is currently being manufactured on Peregrine Semiconductor´s 0.8 /spl mu/m ultra thin silicon on sapphire UTSi/sup R/ process.
Keywords :
UHF integrated circuits; artificial satellites; integrated circuit design; integrated circuit noise; integrated circuit reliability; phase locked loops; phase noise; radiation hardening (electronics); silicon-on-insulator; space vehicle electronics; 1.1 GHz; PLL complexity; PLL power; PLL size; PLL weight; PLLs; SEL immunity; SEU immunity; SEU rate; Si-Al/sub 2/O/sub 3/; UTSi process; high speed RF phase lock loops; integer N PLL; integer N phase lock loop; parallel interfaces; phase noise performance; programming reload; redundancy; satellites; single event latchup immunity; single event upset immunity; single event upset properties; space applications; standby current; total dose properties; ultra thin silicon on sapphire process; Clocks; Manufacturing processes; Parallel programming; Phase locked loops; Phase noise; Radio frequency; Redundancy; Satellites; Semiconductor device manufacture; Single event upset;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1998. Proceedings., 1998 IEEE International
Conference_Location :
Stuart, FL, USA
ISSN :
1078-621X
Print_ISBN :
0-7803-4500-2
Type :
conf
DOI :
10.1109/SOI.1998.723131
Filename :
723131
Link To Document :
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