• DocumentCode
    1965313
  • Title

    Very High Q, NEMS Inductor for 12GHz Wireless Sensor Applications

  • Author

    Khalid, N. ; Singh, J. ; Le, H.P. ; Shah, K. ; Devlin, J. ; Sauli, Z.

  • Author_Institution
    La Trobe Univ., Bundoora, VIC, Australia
  • fYear
    2010
  • fDate
    13-15 Jan. 2010
  • Firstpage
    319
  • Lastpage
    324
  • Abstract
    This paper presents the design and optimisation of high quality (Q) factor inductors using Micro/Nano Electro-Mechanical Systems (NEMS/MEMS) technology for 10 GHz to 20 GHz frequency band. Three inductors have been designed with rectangular, circular and symmetric topologies. Comparison has been made amongst the three to determine the best Q-factor. Inductors are designed on Silicon-on-Sapphire (SOS) because of its advantages including high resistivity and low parasitic capacitance. The effects of various parameters such as outer diameter (OD), the width of metal traces (W), the thickness of the metal (T) and the air gap (AG) on the Q-factor and inductance performances are thoroughly investigated. Results indicate that the symmetric inductor has highest Q-factor with peak Q of 192 at 12 GHz for a 1.13 nH.
  • Keywords
    Q-factor; inductors; micromechanical devices; microwave devices; nanoelectromechanical devices; optimisation; sapphire; silicon; wireless sensor networks; NEMS inductor; NEMS/MEMS technology; circular topology; frequency 10 GHz to 20 GHz; microelectromechanical systems; nanoelectromechanical systems; optimisation; rectangular topology; silicon-on-sapphire; symmetric topology; very high quality factor; wireless sensor applications; Conductivity; Design optimization; Frequency; Inductors; Micromechanical devices; Nanoelectromechanical systems; Parasitic capacitance; Q factor; Topology; Wireless sensor networks; High Q inductor; Micro/Nano Electro-Mechanical Systems (MEMS/NEMS); Silicon-on-sapphire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Design, Test and Application, 2010. DELTA '10. Fifth IEEE International Symposium on
  • Conference_Location
    Ho Chi Minh City
  • Print_ISBN
    978-0-7695-3978-2
  • Electronic_ISBN
    978-1-4244-6026-7
  • Type

    conf

  • DOI
    10.1109/DELTA.2010.45
  • Filename
    5438670