28nm metal-gate high-K CMOS SoC technology for high-performance mobile applications

Author

Yang, S.H. ; Sheu, J.Y. ; Ieong, M.K. ; Chiang, M.H. ; Yamamoto, T. ; Liaw, J.J. ; Chang, S.S. ; Lin, Y.M. ; Hsu, T.L. ; Hwang, J.R. ; Ting, J.K. ; Wu, C.H. ; Ting, K.C. ; Yang, F.C. ; Liu, C.M. ; Wu, I.L. ; Chen, Y.M. ; Chent, S.J. ; Chen, K.S. ; Cheng,

Author_Institution

Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan

fYear

2011

fDate

19-21 Sept. 2011

Firstpage

1

Lastpage

5

Abstract

An industry leading 28nm high-performance mobile SoC technology featuring metal-gate/high-k process is presented. The technology is optimized to offer wide power-to-performance transistor dynamic range and highest wired gate density with superior low-R/ELK interconnects, critical for next generation mobile computing/SOC applications. Through process and design optimization, historical trend is maintained for gate density and SRAM cell sizes. Variations control strategy through process and design collaboration is also described.

Keywords

CMOS integrated circuits; mobile communication; system-on-chip; SRAM cell sizes; high performance mobile applications; metal gate high K CMOS SoC technology; size 28 nm; wide power to performance transistor dynamic range; wired gate density; CMOS integrated circuits; High K dielectric materials; Logic gates; Metals; Mobile communication; Random access memory; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference (CICC), 2011 IEEE

Conference_Location

San Jose, CA

ISSN

0886-5930

Print_ISBN

978-1-4577-0222-8

Type

conf

DOI

10.1109/CICC.2011.6055355

Filename

6055355