DocumentCode
1965392
Title
High-Performance, Glass Stabilized, Microwave Frequency Sources
Author
Pan, Jing-Jong ; Sierak, Paul
Author_Institution
HARRIS Electronic Systems Division
fYear
1975
fDate
1-4 Sept. 1975
Firstpage
185
Lastpage
189
Abstract
An ultrastable, low-noise, low-cost, fixed-frequency, S-band transistor frequency source controlled by a metallized glass cavity has been computer optimized. Frequency and temperature stabilities of 0.9 à 10-9 parts/hour and 1.8 à 10-7 parts/°C, respectively, have been achieved. A C-band, tunable, IMPATT diode frequency source with 8 à 10-8 parts/hour stability, excellent tuning accuracy, and a very clean frequency spectrum is also described. These results demonstrate that glass cavity-controlled frequency sources present a viable alternative to the more complex, expensive frequency synthesizer. This approach can also favorably provide tunable sources in the X-, Ku-, or Ka-band, and fixed-frequency sources using GaAs FET devices up to X-band.
Keywords
Diodes; Frequency synthesizers; Gallium arsenide; Glass; Metallization; Microwave frequencies; Microwave transistors; Stability; Temperature; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1975. 5th European
Conference_Location
Hamburg, Germany
Type
conf
DOI
10.1109/EUMA.1975.332175
Filename
4130804
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