Title :
"Epitaxial" Growth of lnSb on Semi-insulating GaAs by Low Pressure MOCVD
Author :
Iwamura, Yasuo ; Watanabe, Naozo
Author_Institution :
Department of Electrical Engineering, Kanagawa University, Japan
Keywords :
Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium; Inductors; Lattices; MOCVD; Substrates; Temperature; X-ray diffraction;
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
DOI :
10.1109/MOVPE.1992.664926
