A fully integrated SiGe receiver IC for 10 Gb/s data rate

Author

Greshishchev, Y.M. ; Schvan, P. ; Showell, J.L. ; Mu-Liang Xu ; Ojha, J.J. ; Rogers, J.E.

Author_Institution

Nortel Networks, Ottawa, Ont., Canada

fYear

2000

fDate

9-9 Feb. 2000

Firstpage

52

Lastpage

53

Abstract

A silicon germanium (SiGe) receiver IC integrates most of the 10 Gb/s SONET receiver functions previously implemented using GaAs HBT components. The receiver combines an AGC, clock and data recovery circuit (CDR) with a binary type PLL, 1:8 demultiplexer, and a 2/sup 7/-1 PRBS generator for self-testing. Compared to other silicon designs, this work demonstrates a higher level of integration as well as a CDR with SONET-compliant jitter characteristics.

Keywords

Ge-Si alloys; SONET; bipolar digital integrated circuits; optical receivers; semiconductor materials; 10 Gbit/s; AGC; PRBS generator; SONET; SiGe; binary-type PLL; clock and data recovery circuit; demultiplexer; jitter; self-testing; silicon germanium receiver IC; Built-in self-test; Circuits; Clocks; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Jitter; Phase locked loops; SONET; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC. 2000 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-5853-8

Type

conf

DOI

10.1109/ISSCC.2000.839687

Filename

839687