Title :
A fully integrated SiGe receiver IC for 10 Gb/s data rate
Author :
Greshishchev, Y.M. ; Schvan, P. ; Showell, J.L. ; Mu-Liang Xu ; Ojha, J.J. ; Rogers, J.E.
Author_Institution :
Nortel Networks, Ottawa, Ont., Canada
Abstract :
A silicon germanium (SiGe) receiver IC integrates most of the 10 Gb/s SONET receiver functions previously implemented using GaAs HBT components. The receiver combines an AGC, clock and data recovery circuit (CDR) with a binary type PLL, 1:8 demultiplexer, and a 2/sup 7/-1 PRBS generator for self-testing. Compared to other silicon designs, this work demonstrates a higher level of integration as well as a CDR with SONET-compliant jitter characteristics.
Keywords :
Ge-Si alloys; SONET; bipolar digital integrated circuits; optical receivers; semiconductor materials; 10 Gbit/s; AGC; PRBS generator; SONET; SiGe; binary-type PLL; clock and data recovery circuit; demultiplexer; jitter; self-testing; silicon germanium receiver IC; Built-in self-test; Circuits; Clocks; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Jitter; Phase locked loops; SONET; Silicon germanium;
Conference_Titel :
Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC. 2000 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-5853-8
DOI :
10.1109/ISSCC.2000.839687
