Title :
InP HBT/Si CMOS-Based 13-Bit 1.33Gsps Digital-to-Analog Converter with >70 dB SFDR
Author :
Oyama, B. ; Ching, D. ; Thai, K. ; Gutierrez-Aitken, A. ; Cohen, N. ; Scott, D. ; Hennig, K. ; Kaneshiro, E. ; Nam, P. ; Chen, J. ; Chang-Chien, P. ; Patel, V.J.
Author_Institution :
Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA
Abstract :
Gigahertz-rate Digital-to-Analog Converters (DACs) have become readily available from several commercial vendors but have been unable to achieve >;70 dB spurious-free dynamic range (SFDR) performance over a wide bandwidth (≥500MHz). This paper presents the results of a unique, heterogeneously-integrated (InP HBT with 0.18um silicon CMOS), 13-bit 1.33Gsps DAC that achieves >;70dB SFDR across a 500MHz bandwidth in the second Nyquist zone (750MHz to 1250MHz).
Keywords :
CMOS integrated circuits; digital-analogue conversion; elemental semiconductors; heterojunction bipolar transistors; indium compounds; silicon; HBT CMOS-based digital-to-analog converter; InP-Si; SFDR; bandwidth 500 MHz; commercial vendors; frequency 750 MHz to 1250 MHz; gigahertz-rate DAC; second Nyquist zone; size 0.18 mum; spurious-free dynamic range performance; word length 13 bit; CMOS integrated circuits; Current measurement; Frequency measurement; Heterojunction bipolar transistors; Indium phosphide; MOS devices; Silicon;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
Conference_Location :
La Jolla, CA
Print_ISBN :
978-1-4673-0928-8
DOI :
10.1109/CSICS.2012.6340082
