Author :
Chevalier, P. ; Lacave, T. ; Canderle, E. ; Pottrain, A. ; Carminati, Y. ; Rosa, J. ; Pourchon, F. ; Derrier, N. ; Avenier, G. ; Montagne, A. ; Balteanu, A. ; Dacquay, E. ; Sarkas, I. ; Celi, D. ; Gloria, D. ; Gaquiere, Christopher ; Voinigescu, S.P. ; Ch
Abstract :
This paper summarizes the technological developments carried out in STMicroelectronics to raise the fT / fMAX of SiGe HBTs up to ~ 300 GHz / 400 GHz. The noise and power performance in the W-band of different SiGe HBT generations are compared along with CML ring oscillators and circuit results up to the D band.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar MIMIC; field effect MIMIC; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor materials; submillimetre wave transistors; BiCMOS technology; CML ring oscillators; D band; HBT generations; STMicroelectronics; SiGe; W-band; noise performance; power performance; BiCMOS integrated circuits; Frequency measurement; Heterojunction bipolar transistors; Noise measurement; Ring oscillators; Silicon germanium;
