• DocumentCode
    1965579
  • Title

    Exotic and mundane substrates for gallium nitride heteroepitaxy

  • Author

    Hellman, E.

  • Author_Institution
    Bell Labs., Lucent Technol., Murray Hill, NJ, USA
  • fYear
    1997
  • fDate
    11-13 Aug. 1997
  • Firstpage
    33
  • Lastpage
    34
  • Abstract
    It is often asserted that the principal obstacle to the epitaxial growth of high quality gallium nitride is the lack of a lattice matched substrate. Although this view is overly simplistic and underly factual, it conveys the correct impression that the most commonly used substrate, sapphire, has many shortcomings. Are there substrates to improve on sapphire? We have studied the growth of gallium nitride on a variety of materials, including ZnO, LiGaO/sub 2/, LiAlO/sub 2/, ScMgAlO/sub 4/, Si, garnets and spinels. By growing on a variety of materials, we can assess the relative importance of lattice match, thermal expansion match, chemical stability and compatibility, polarity, and even cost of a substrate on the ensuing growth.
  • Keywords
    III-V semiconductors; gallium compounds; semiconductor epitaxial layers; semiconductor growth; substrates; GaN; LiAlO/sub 2/; LiGaO/sub 2/; ScMgAlO/sub 4/; Si; ZnO; chemical compatibility; chemical stability; cost; epitaxial growth; gallium nitride; garnet; heteroepitaxy; lattice match; polarity; spinel; substrate; thermal expansion match; Chemicals; Epitaxial growth; Gallium nitride; Garnets; III-V semiconductor materials; Lattices; Substrates; Thermal expansion; Thermal stability; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
  • Conference_Location
    Montreal, Que., Canada
  • Print_ISBN
    0-7803-3891-X
  • Type

    conf

  • DOI
    10.1109/LEOSST.1997.619250
  • Filename
    619250