DocumentCode
1965579
Title
Exotic and mundane substrates for gallium nitride heteroepitaxy
Author
Hellman, E.
Author_Institution
Bell Labs., Lucent Technol., Murray Hill, NJ, USA
fYear
1997
fDate
11-13 Aug. 1997
Firstpage
33
Lastpage
34
Abstract
It is often asserted that the principal obstacle to the epitaxial growth of high quality gallium nitride is the lack of a lattice matched substrate. Although this view is overly simplistic and underly factual, it conveys the correct impression that the most commonly used substrate, sapphire, has many shortcomings. Are there substrates to improve on sapphire? We have studied the growth of gallium nitride on a variety of materials, including ZnO, LiGaO/sub 2/, LiAlO/sub 2/, ScMgAlO/sub 4/, Si, garnets and spinels. By growing on a variety of materials, we can assess the relative importance of lattice match, thermal expansion match, chemical stability and compatibility, polarity, and even cost of a substrate on the ensuing growth.
Keywords
III-V semiconductors; gallium compounds; semiconductor epitaxial layers; semiconductor growth; substrates; GaN; LiAlO/sub 2/; LiGaO/sub 2/; ScMgAlO/sub 4/; Si; ZnO; chemical compatibility; chemical stability; cost; epitaxial growth; gallium nitride; garnet; heteroepitaxy; lattice match; polarity; spinel; substrate; thermal expansion match; Chemicals; Epitaxial growth; Gallium nitride; Garnets; III-V semiconductor materials; Lattices; Substrates; Thermal expansion; Thermal stability; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location
Montreal, Que., Canada
Print_ISBN
0-7803-3891-X
Type
conf
DOI
10.1109/LEOSST.1997.619250
Filename
619250
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