Title :
A Watt-Class Digital Transmitter with a Voltage-Mode Class-S Power Amplifier and an Envelope Delta-Sigma Modulator for 450 MHz Band
Author :
Hori, Shinichi ; Wentzel, Andreas ; Hayakawa, Makoto ; Heinrich, Wolfgang ; Kunihiro, Kazuaki
Author_Institution :
NEC Corp., Kawasaki, Japan
Abstract :
A single-bit high efficiency watt-class digital transmitter for the 450 MHz band is presented, using a GaN voltage-mode class-S power amplifier and a CMOS envelope ΔΣ modulator. The transmitter achieves 1.1 W output power with 69% drain efficiency for a 400 MHz WCDMA uplink signal, thus meeting the 3GPP specifications for ACLR. A power control from 0.45 W to 1.8 W is achieved by changing the supply voltage of the power amplifier from 20 V to 40 V, keeping the drain efficiency beyond 58% without any degradation of ACLR.
Keywords :
3G mobile communication; CMOS integrated circuits; III-V semiconductors; UHF integrated circuits; UHF power amplifiers; code division multiple access; delta-sigma modulation; gallium compounds; radio transmitters; wide band gap semiconductors; 3GPP specifications; ACLR; CMOS envelope ΔΣ modulator; GaN; WCDMA uplink signal; adjacent channel leakage power ratio; efficiency 69 percent; frequency 400 MHz; frequency 450 GHz; power 0.45 W to 1.8 W; power control; single-bit high efficiency watt-class digital transmitter; voltage 20 V to 40 V; voltage-mode class-S power amplifier; Modulation; Multiaccess communication; Power amplifiers; Power generation; Spread spectrum communication; Transmitters;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE
Conference_Location :
La Jolla, CA
Print_ISBN :
978-1-4673-0928-8
DOI :
10.1109/CSICS.2012.6340086
