Title :
The Effect of Transferred-Electron Velocity Modulation in High-Efficiency GaAs Impatt Diodes
Author :
Pribetich, J. ; Constant, E. ; Farrayre, A. ; Lefebvre, M.
Author_Institution :
Centre Hyperfréquences et Semiconducteurs (E.R.A. au C.N.R.S. N° 454), UNIVERSITE DE LILLE 1. BP 36 59650 VILLENEUVE D´´ASCQ FRANCE
Abstract :
The transferred-electron effect on high efficiency IMPATT avalanche diodes characterized by non punch-through structures is investigated. It is shown that the high (greater that 30%) output efficiencies, experimentally obtained with GaAs non punch-through IMPATT devices, are only possible due to the specific features of the electron velocity versus electric field dependence in this material. Some experimental results are given which corroborate the theoretical conclusions. Based on this new understanding, suggestions are made for further improvement of IMPATT performance.
Keywords :
Conductivity; Doping profiles; Electrons; Gallium arsenide; Gunn devices; Indium phosphide; Semiconductor devices; Semiconductor diodes; Shape; Tunneling;
Conference_Titel :
Microwave Conference, 1975. 5th European
Conference_Location :
Hamburg, Germany
DOI :
10.1109/EUMA.1975.332202
