• DocumentCode
    1965621
  • Title

    The Effect of Transferred-Electron Velocity Modulation in High-Efficiency GaAs Impatt Diodes

  • Author

    Pribetich, J. ; Constant, E. ; Farrayre, A. ; Lefebvre, M.

  • Author_Institution
    Centre Hyperfréquences et Semiconducteurs (E.R.A. au C.N.R.S. N° 454), UNIVERSITE DE LILLE 1. BP 36 59650 VILLENEUVE D´´ASCQ FRANCE
  • fYear
    1975
  • fDate
    1-4 Sept. 1975
  • Firstpage
    246
  • Lastpage
    250
  • Abstract
    The transferred-electron effect on high efficiency IMPATT avalanche diodes characterized by non punch-through structures is investigated. It is shown that the high (greater that 30%) output efficiencies, experimentally obtained with GaAs non punch-through IMPATT devices, are only possible due to the specific features of the electron velocity versus electric field dependence in this material. Some experimental results are given which corroborate the theoretical conclusions. Based on this new understanding, suggestions are made for further improvement of IMPATT performance.
  • Keywords
    Conductivity; Doping profiles; Electrons; Gallium arsenide; Gunn devices; Indium phosphide; Semiconductor devices; Semiconductor diodes; Shape; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1975. 5th European
  • Conference_Location
    Hamburg, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1975.332202
  • Filename
    4130817
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1965621