An S-Band GaN on Si High Power Amplifier with 170W Output Power and 70% Drain Efficiency

Author

Kosaka, N. ; Uchida, Hironaga ; Noto, H. ; Yamanaka, Keiji ; Nakayama, Makoto ; Kanaya, Koh ; Nogami, Yasuyuki ; Inoue, Akira ; Hirano, Yoshikuni

Author_Institution

Electro-Opt. & Microwave Electron. Technol. Dept., Mitsubishi Electr. Corp., Kamakura, Japan

fYear

2012

fDate

14-17 Oct. 2012

Firstpage

1

Lastpage

4

Abstract

A high power amplifier (HPA) with AlGaN/GaN HEMTs on Si substrate is presented. This HPA involves a pair of the HEMT-chips with a source field plate (SFP) and input matching networks on dielectric substrates, which are mounted in a metal package. With harmonic terminations at both the input and the output, output power (Pout) of 170 W, drain efficiency (DE) of 70%, and power added efficiency (PAE) of 63% have been obtained at 2.15 GHz. The authors believe that the DE be the highest value among ever-reported ones of GaN on Si HPAs.

Keywords

III-V semiconductors; UHF power amplifiers; aluminium compounds; dielectric materials; elemental semiconductors; gallium compounds; silicon; wide band gap semiconductors; AlGaN-GaN; HEMT chips; HPA; SFP; Si; dielectric substrates; drain efficiency; efficiency 63 percent; efficiency 70 percent; frequency 2.15 GHz; harmonic terminations; matching networks; metal package; power 170 W; power added efficiency; silicon high-power amplifier; silicon substrate; source field plate; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE

Conference_Location

La Jolla, CA

ISSN

1550-8781

Print_ISBN

978-1-4673-0928-8

Type

conf

DOI

10.1109/CSICS.2012.6340089

Filename

6340089