DocumentCode
1965685
Title
Growth of GaSb and InSb by Low Pressure Plasma-MOVPE
Author
Stoll, B. ; Brysch, W. ; Behet, M. ; Heime, K.
Author_Institution
Institut fur Halbleitertechnik, RWTH Aachen, Deutschland
fYear
1992
fDate
8-11 Jun 1992
Firstpage
43
Lastpage
44
Keywords
Diode lasers; Gallium arsenide; Kinetic theory; Optical materials; Plasma materials processing; Plasma temperature; Semiconductor materials; Substrates; Surface morphology; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.664927
Filename
664927
Link To Document