Title :
Development of Quantum Device Simulator, NEMO-VN2
Author_Institution :
Univ. of Natural Sci., Ho Chi Minh City, Vietnam
Abstract :
We develop some versions of quantum devices simulators such as NEMO-VN, NEMO-VN1 and NEMO-VN2. The quantum device simulator - NEMO-VN2 focuses on carbon nanotube FET (CNTFET). CNTFETs have been studied in recent years as potential alternatives to CMOS devices because of their compelling properties. Studies of phonon scattering in CNTs and its influence in CNTFET have focused on metallic tubes or on long semiconducting tubes. Phonon scattering in short channel CNTFETs, which is important for nanoelectronic applications, remains unexplored. In this work the non-equilibrium Green function (NEGF) is used to perform a comprehensive study of CNT transistors. The program has been written by using graphic user interface (GUI) of Matlab. We find that the effect of scattering on current-voltage characteristics of CNTFET is significant. The degradation of drain current due to scattering has been observed. Some typical simulation results have been presented for illustration.
Keywords :
Green´s function methods; carbon nanotubes; electronic engineering computing; field effect transistors; graphical user interfaces; nanotube devices; Matlab; NEMO-VN1; NEMO-VN2; carbon nanotube FET; drain current; graphic user interface; non-equilibrium Green function; phonon scattering; quantum device simulator; CNTFETs; Current-voltage characteristics; Degradation; Graphical user interfaces; Graphics; Green function; Particle scattering; Phonons; Semiconductivity; User interfaces; coaxial CNTFET; phonon scattering; planar CNTFET; quantum device simulator;
Conference_Titel :
Electronic Design, Test and Application, 2010. DELTA '10. Fifth IEEE International Symposium on
Conference_Location :
Ho Chi Minh City
Print_ISBN :
978-0-7695-3978-2
Electronic_ISBN :
978-1-4244-6026-7
DOI :
10.1109/DELTA.2010.44