DocumentCode
1965762
Title
Optical gain in GaN based semiconductors
Author
Domen, K. ; Horino, K. ; Kuramata, A. ; Tanahashi, T.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
1997
fDate
11-13 Aug. 1997
Firstpage
35
Lastpage
36
Abstract
Since successful lasing has been reported for wurtzite (WZ) GaN and related materials, researchers are now interested in exploring the possibility of reducing the threshold current density (Jth). In this paper, we focus on this point by calculating the optical gain. We discuss the reduction in Jth on the c-plane, and we investigate the anisotropic strain effect on the (11~00) plane.
Keywords
III-V semiconductors; gallium compounds; semiconductor lasers; GaN; anisotropic strain; film; nitride laser; optical gain; threshold current density; wurtzite semiconductor; Anisotropic magnetoresistance; Capacitive sensors; Charge carrier density; Gallium nitride; Geometrical optics; Laboratories; Optical films; Quantum well devices; Tensile strain; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location
Montreal, Que., Canada
Print_ISBN
0-7803-3891-X
Type
conf
DOI
10.1109/LEOSST.1997.619251
Filename
619251
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